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A highly precise method for locating the valence-band edge in x-ray photoemission spectra is reported. The application to measuring semiconductor interface potentials is discussed. X-ray photoemission-spectroscopy experiments on Ge and GaAs (110) crystals have given Ge 3d, Ga 3d, and As 3d core level to valence-band edge binding-energy differences of 29. 55, 18. 81, and 40. 73 eV to a precision of 0. 02 eV. For illustration, the valence-band discontinuity at an abrupt Ge/GaAs (110) heterojunction is determined to be 0. 530. 03 eV.
Kraut et al. (Mon,) studied this question.
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