Photodetectors based on treated CdSe quantum-dot films

We demonstrate photodetectors of sandwich geometry active in the visible spectrum in which the active layer is a 200 nm thick film of CdSe quantum dots (QDs). The solution-phase treatment of the QD film with n-butylamine after casting greatly increases the exciton dissociation efficiency and charge-transport properties of the film. Under 110mW∕cm2 illumination with light at λ=514nm, the photocurrent to dark current ratio, Iphoto∕Idark, is 103 at V=0V, and the 3 dB frequency is ∼50kHz. At room temperature, we observe zero-bias external quantum efficiencies (EQE) from 0.08% to 0.23% in the wavelength range λ=350nm to λ=575nm, corresponding to an internal quantum efficiency (IQE) of 0.6±0.1% across the tested spectrum. At V=−6V, EQE ranges from 15% to 24%, corresponding to an IQE of 70±10%.