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The classical memory device with cryogenic operation is in high demanded for quantum information processing. The cryogenic endurance of anti-ferroelectric (AFE) and ferroelectric (FE) Hf₁-ₗZrₗO₂ capacitors is investigated for 10^10 cycles (80 K). Moreover, the AFE capacitor exhibits a high speed response with ~ 80% normalized switching 2Pₑ, ₒₖ for t= 1\ compared to ~ 60% for the FE capacitor at 80 K.
Hsiang et al. (Wed,) studied this question.