Key points are not available for this paper at this time.
Abstract Nonradiative recombination processes are the biggest hindrance to approaching the radiative limit of the open‐circuit voltage for wide bandgap perovskite solar cells. In addition to high bulk quality, good interfaces and good energy level alignment for majority carriers at charge transport layer‐absorber interfaces are crucial to minimize nonradiative recombination pathways. By tuning the lowest‐unoccupied molecular‐orbital of electron transport layers via the use of different fullerenes and fullerene blends, open‐circuit voltages exceeding 1.35 V in CH 3 NH 3 Pb(I 0.8 Br 0.2 ) 3 device are demonstrated. Further optimization of mobility in binary fullerenes electron transport layers can boost the power conversion efficiency as high as 18.9%. It is noted in particular that the V oc fill factor product is >1.096 V, which is the highest value reported for halide perovskites with this bandgap.
Liu et al. (Wed,) studied this question.