Textiles, widely used in our daily lives, hold immense potential as platforms for next-generation flexible and wearable electronics. However, fabricating photodetectors (PDs) on textiles is challenging due to surface roughness and poor film formation. Here, we demonstrate practical textile-based broadband perovskite PDs fabricated via low-temperature (up to 100 °C) solution-based processing on a UV-resin planarized textile substrate. A lateral geometry with interdigitated electrodes enables a flexible device architecture without rigid transparent electrodes. Direct contact between metal electrodes and perovskite leads to device failure due to interfacial reactions and metal diffusion into the perovskite layer; this is resolved by introducing a bilayer interfacial structure (Fullerene, C60/bathocuproine, BCP) that mitigates degradation and enhances charge transport. The optimized planar PDs exhibit significantly improved performance over control devices, along with excellent mechanical, environmental, and thermal stability. These results demonstrate a scalable approach for integrating perovskite optoelectronics into textiles, opening avenues for wearable and disposable electronic applications.
Afroz et al. (Thu,) studied this question.
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