Modulation of oxygen vacancy filaments and crystal structure by thermal annealing for high-performance solution-processed HfZrO x resistive memory

Key Points

• Determine the effects of thermal annealing on the resistive switching properties of HfZrO-based memory devices.
• Evaluated Ti/HZO/n+-Si memory devices with varying annealing temperatures (300 °C to 900 °C) for performance assessment.
• Assessed the relationship between annealing conditions and oxygen vacancy modulation in HZO layers.
• Found enhanced resistive switching performance correlating with optimal annealing temperatures.
• Demonstrated a direct link between oxygen vacancy filament formation and crystal structure in HfZrO.