What question did this study set out to answer?

Investigate the impact of reduced graphene oxide on the performance and stability of perovskite solar cells.

May 6, 2026

Interfacial engineering with reduced graphene oxide for high-performance perovskite solar cells

Key Points

Investigate the impact of reduced graphene oxide on the performance and stability of perovskite solar cells.
Utilized numerical simulations to model the effects of reduced graphene oxide in PSCs.
Analyzed charge dynamics and interfacial properties in perovskite/HTL heterojunctions.
Evaluated performance metrics including efficiency and open-circuit voltage.
Achieved a theoretical efficiency of 28.56%, a 5.65% improvement over unmodified PSCs.
Demonstrated improved charge recombination resistance and energy band alignment.
Maintained 82% of original power conversion efficiency under simulated thermal stress at 460K.

Abstract

High-performance perovskite solar cells (PSCs) have exhibited limited long-term stability, mainly driven by layer-to-layer ion diffusion in the perovskite/hole-transport layer (HTL) interface, resulting in a decrease in the HTL and component loss in the perovskite. Graphene derivatives are commonly used in PSC thanks to their high electrical conductivity and charge mobility. By using numerical simulations, reduced graphene oxide (rGO) is introduced at the formamidinium lead triiodide (FAPbI 3 ) perovskite/HTL heterojunction to introduce interfacial engineering, allowing for improvement of the charge dynamics. The modeled rGO-based PSC devices exhibit suppressed interfacial charge accumulation and improved energy band alignment, significantly enhancing charge recombination resistance. The optimization findings demonstrate that the best-performing PSC is attained with a perovskite layer thickness of 0.8Formula: see text Formula: see textm, a trap-state density of 10Formula: see text Formula: see textcmFormula: see text, and an effective density of states of 10Formula: see text Formula: see textcmFormula: see text. As a result, the simulated FTO/SnO 2 /FAPbI 3 /rGO/Spiro-OMeTAD/Au structure incorporating the rGO interlayer achieves a theoretical efficiency of 28.56% (a 5.65% improvement relative to the unmodified devices) with an open-circuit voltage (Formula: see text) of 1.273Formula: see textV, a short-circuit current (Formula: see text) of 26.495Formula: see textmAFormula: see textcmFormula: see text, and a fill factor (FF) of 85.624%. More importantly, the simulated rGO-based PSCs exhibit tolerance to elevated trap states, parasitic resistance variations, and thermal stress. The optimized rGO-based devices maintained 82% of their original PCE after simulating at 460Formula: see textK. The findings of this study originate from SCAPS-1D simulation, providing a guideline for experimental realization of graphene-engineered PSCs.

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