Key points are not available for this paper at this time.
The hydrogen contents and etch rates have been measured for plasma-deposited silicon nitrides made in nine different commercially available reactors as well as for some low pressure chemical vapor deposited nitrides. The hydrogen contents vary from 4% to 39% (atomic). A correlation is observed between etch rate and hydrogen content, with etch rates varying over three orders of magnitude.
Chow et al. (Sun,) studied this question.