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Perovskite solar cells (PSCs) have been introduced as an attractive photovoltaic technology over the past decade due to their low‐cost processing, earth‐abundant raw materials, and high power conversion efficiencies (PCEs) of up to 25.2%. However, the relatively high density of defects within the bulk, grain boundaries, and surface of polycrystalline perovskite films acts as recombination centers and facilitates ion migration, lowering the theoretical PCE ceiling, often leading to inferior device stability. Therefore, understanding the defect sources and developing passivation methods are key factors for reaching higher PCEs and stabilities in perovskite photovoltaics. Herein, various passivation methods, including bulk and surface treatment of perovskite films, are explored. In the bulk treatment, the passivating agents should be directly added to the perovskite precursor. However, in the surface treatment method, the surface of perovskite films can be treated by inducing passivating agents during the intermediate phase or after annealing steps, denoted here as in‐film or surface posttreatment. In addition, different kinds of passivating agents are categorized based on their functional groups. Finally, the outline directions to minimize the defects in perovskite films are highlighted.
Byranvand et al. (2021) studied this question.