Grain Structure-Controlled Growth of InSb Crystals: A Grain Boundary Engineering Approach for Enhanced Thermoelectric Performance

Key Points

• This research aims to enhance the thermoelectric performance of InSb crystals through grain boundary engineering by controlling their growth.
• Prepared InSb polycrystalline ingots using direct melt quenching method under varying cooling rates: slow cooling, air quenching, and ice water quenching.
• Analyzed the crystal structure and grain boundaries to assess their impact on thermoelectric properties.
• Significant enhancement in thermoelectric performance observed with optimized grain structure.
• Cooling rate adjustments resulted in modified grain boundary characteristics, influencing electrical and thermal conductivity.