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May 15, 2026The Journal of Physical Chemistry Letters0 citations

Polarity-Programmable Bismuth Oxide Overlayers on Bi(111)/MoS 2 Heterostructures via Oxidation and Annealing

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SHSang Wook HanWYWon Seok YunSSSeungho Seong

Key Points

  • Investigate the transition in band structure and polarity through oxidation and annealing of bismuth oxide overlayers.
  • Analyzed Bi(111) heterostructures via oxidation and annealing processes.
  • Examined electronic properties to identify band gap modifications.
  • Transition from wide-gap, O-2p-dominated oxide to narrow, Bi-dominated direct gap at Γ observed.
  • P → n band structure evolution supports the tuning of polarity and band alignment.

Abstract

/Bi(111) heterostructures reveal a transition from a wide-gap, O-2p-dominated oxide to a narrow, Bi-dominated direct gap at Γ, which supports the observed p → n band structure evolution. These findings provide a fundamental mechanism for tuning the polarity and band alignment of Bi-oxide-based interfaces on 2D semiconductors.

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Cite This Study

Han et al. (2026) studied this question.

synapsesocial.com/papers/6a06b86ae7dec685947aad79https://doi.org/10.1021/acs.jpclett.6c00282
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