Demonstrates polarity tuning and band alignment in bismuth oxide interfaces on 2D semiconductors, indicating potential for advanced applications.
/Bi(111) heterostructures reveal a transition from a wide-gap, O-2p-dominated oxide to a narrow, Bi-dominated direct gap at Γ, which supports the observed p → n band structure evolution. These findings provide a fundamental mechanism for tuning the polarity and band alignment of Bi-oxide-based interfaces on 2D semiconductors.
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Han et al. (2026) studied this question.
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