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June 9, 2022Open Access

Stable Resistive Switching in ZnO/PVA:MoS2 Bilayer Memristor

TSTangyou SunInternational Iberian Nanotechnology Laboratory HSHui ShiGuangdong Medical College SGShuai GaoChongqing University

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Abstract

/ITO device has shown great application potential for the nonvolatile multilevel data storage memory.

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Sun et al. (Thu,) studied this question.

synapsesocial.com/papers/6a073775964d5135c0d3fd70 https://doi.org/https://doi.org/10.3390/nano12121977

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3Preparation and characterization of graphene oxide reinforced PVA film with boric acid as crosslinker2015 · 92 citations
4TEM Nanostructural Investigation of Ag-Conductive Filaments in Polycrystalline ZnO-Based Resistive Switching Devices2020 · 59 citations
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Stabile resistive Schaltung in ZnO/PVA:MoS2 Bilayer-Memristor | Synapse