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We have made the first observations of resonant tunneling in the AlSb/GaSb material system. Double-barrier p-type heterostructures exhibit two distinct features in their current-voltage characteristics, indicating resonant tunneling via confined valence-band states. The measured energy level positions are consistent with a substantial valence-band offset of approximately 0.4 eV.
Beresford et al. (Mon,) studied this question.