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The design and performance of an 800 X 800 pixel charge-coupled device (CCD) imager are described. This device is fabricated utilizing a three-phase, three-level polysilicon gate process. The chip is thinned to 8 um and is employed in the rear illumination mode. Detailed measurements of the device performance, including dark current as a function of temperature, linearity, and noise, are presented. The device is coated with an ultraviolet (UV) downconverting phosphor which allows imaging with the same device over an extremely wide optical bandwidth.
Blouke et al. (Sat,) studied this question.