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An important development in polycrystalline Cu(In,Ga)Se2 (CIGS) thin-film photovoltaic solar cells is the attainment of a high voltage device simultaneous with state-of-the-art conversion efficiency. This letter describes a CIGS-based solar cell that demonstrates an open-circuit voltage (Voc) approaching 700 mV and a total-area conversion efficiency of 12.2%. The high value of Voc was achieved by grading In/Ga through the absorber by a computer-controlled physical vapor deposition (PVD) process that utilizes variable metal fluxes.
Contreras et al. (Mon,) studied this question.