Study of optically induced degradation of conductivity in hydrogenated amorphous silicon by transient grating method

Optically induced degradation of the conductivity (the Staebler–Wronski effect) in glow discharge hydrogenated amorphous Si was examined by a transient grating method. It was clarified that the Staebler–Wronski effect was a bulk and not a surface effect, and the origin of the decrease of the photoconductivity was mainly attributed to the decrease of the lifetime instead of the mobility.