Key points are not available for this paper at this time.
An n-channel insulated-gate field-effect transistor technology established at IBM Research has served as the basis for further development leading to FET memory. Designs and characteristics of experimental devices of 500 and 1000 Å gate insulator thicknesses are presented, with particular attention to the effects of source-drain spacing.
Critchlow et al. (Sat,) studied this question.