A high-performance C-band integrated front-end in AlGaN/GaN technology

In this contribution, a Single-Chip Front-End (SCFE) operating in C-band (from 5.25 GHz to 5.57 GHz) is proposed. The chip is designed exploiting a GaN HEMT process available at Leonardo S.p.A. foundry, featured by 250 nm gate length. The SCFE integrates switching, low-noise and high-power amplification functionalities over the same chip for a total area of 7×7 mm 2 . In transmit (Tx) mode, 43% power added efficiency (PAE) and 47.2 dBm output power are obtained at 3.5 dB compression. Good performance in terms of noise figure (<1.94 dB) and gain (38.5 dB) are achieved in Receive (Rx) mode. Moreover, an active stage along the Rx chain is implemented to limit the maximum output power during overdrive at the Rx output port.