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Abstract The magnetic energy levels in a symmetry‐induced zero‐gap semiconductor of α‐Sn‐type are calculated in the three‐level model. An analytical expression for the g ‐factor of conduction electrons is derived and shown to be in good agreement with existing experimental data on HgTe and HgSe. The electron wave function for the conduction band is found explicitly and the optical absorption due to electric dipole transitions between spin states of the same Landau level (electric spin resonance) as well as that due to combined transitions (electric combined resonance) is calculated.
Kacman et al. (Fri,) studied this question.
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