We report the successful fabrication of ZnSe p-n junction light-emitting diodes in which Li and Cl are used as p-type and n-type dopants, respectively.

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Ren et al. (Mon,) studied this question.

synapsesocial.com/papers/6a11fa32ccefb17cd5cccffd https://doi.org/https://doi.org/10.1063/1.104006

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Growth of p- and n-type ZnSe by molecular beam epitaxy1989 · 85 citations
2Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x-ray photoelectron spectroscopy (XPS)

ZnSe light-emitting diodes | Synapse

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

1Growth of p- and n-type ZnSe by molecular beam epitaxy1989 · 85 citations
2Measurement of ZnSe–GaAs(110) and ZnSe–Ge(110) heterojunction band discontinuities by x-ray photoelectron spectroscopy (XPS)

1982 · 151 citations

3Study of the interface of undoped and <i>p</i>-doped ZnSe with GaAs and AlAs1990 · 52 citations

4Detection and control of impurity incorporation in MBE-grown ZnSe1988 · 39 citations

5Low-temperature growth of ZnSe by molecular beam epitaxy using cracked selenium1990 · 28 citations