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We demonstrate by Raman scattering that the spin splitting in the conduction band of a GaAs/ Ga₁-ₗAlₗAs asymmetric quantum well is anisotropic and inequivalent along the 11 and 11 directions. This agrees with the results of tight-binding calculations. The Rashba contribution to the spin orientation induced by the asymmetric potential is of comparable magnitude to the bulk inversion-asymmetry-induced term. Hence, we obtain quantitative information on the origin of the spin orientation at the GaAs/Ga₁-ₗAlₗAs interface.
Jusserand et al. (Wed,) studied this question.
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