Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs. InP HEMTs with size of 4 × 50 µm were measured on‐wafer by DC and S‐parameter characterization. Device noise performance was indirectly evaluated by measuring and modeling the gain and noise of a three‐stage hybrid 4–8 GHz cryogenic LNA equipped with the InP HEMTs. When operating the LNA at a DC power of 2.1 mW, the InP HEMT LNA average noise temperature was 1.4 K with an average gain of 41.6 dB. The minimum noise temperature of the InP HEMT was estimated to be 1.1 K at 6 GHz. The performance achieved for the InP HEMT LNA is comparable to the LNAs currently used in quantum computing while requiring only 27% of the DC power consumption. Small‐signal modeling of the InP HEMT suggested that this was due to a low output conductance associated with a large gate‐recess length used in device fabrication.
Rebelo et al. (Sat,) studied this question.