This paper presents the design and fabrication of a wideband low-noise amplifier (LNA) covering C-band, using the 0.15 µm GaAs pHEMT process. To achieve both low noise performance and wide matching characteristics, a two-stage cascaded architecture is implemented. In the first stage, circular inductors and an inductive source degeneration technique are employed to minimize the noise figure (NF) while ensuring wideband input matching. Furthermore, an RC feedback structure is incorporated to effectively enhance the stability of the amplifier. The proposed LNA operates under a supply voltage of 3.3 V and a gate bias of 0.35 V, with a total DC power consumption of 69.3 mW. The fabricated MMIC occupies a total chip area of 1.98 mm2, including the probing pads. Measurement results demonstrate that the LNA achieves an NF of 0.81–1.09 dB and a gain of over 20.1 dB in the frequency range of 3.3–8.0 GHz. The input and output return losses are maintained over 10 dB and 9.7 dB, respectively.
조성훈 et al. (Sat,) studied this question.