Gate-control strategies for snubberless operation of series connected IGBTs

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Abstract

Increasing the operation voltage and hence the switching power by series connection of IGBT-modules causes transient and static voltage imbalances. To achieve snubberless operation, novel gate-control strategies have been developed. Active gate-controlled voltage balancing and gate-side di/dt-control as well as dv/dt-control are presented in theory and with measurement results.

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Gerster et al. (Mon,) studied this question.

synapsesocial.com/papers/6a158dba79ff98d0de4ece2b https://doi.org/https://doi.org/10.1109/pesc.1996.548815

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