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This paper discusses some theories and models, mainly those developed for amorphous semiconductors by Mott, Cohen, and Böer. The relationships between the theoretical work and a number of structural, optical, and electrical characteristics of amorphous materials are considered. Particular attention is paid to the question of whether or not the traditional interpretations of experimental measurements and the conventional language in which they are described may be applied to amorphous materials.
R. S. Allgaier (Fri,) studied this question.