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(X = Cl, Br, I) have been obtained by a halogen substitution strategy, in which an increase in the halogen size (Cl → Br → I) decreases the phase transition temperature (454 K → 343 K) and band gap (2.9 eV → 1.71 eV). With switchable dielectric behavior and tunable semiconductor properties, these materials provide new ideas for the development of smart sensors, nonvolatile memories, and efficient optoelectronic devices.
Wei et al. (Wed,) studied this question.