January 20, 2003

Current status and prospects of FET-type ferroelectric memories

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Abstract

In this talk, novel MFSFET (metal-ferroelectric-semiconductor FET) arrays for applying to a single-transistor-cell-type digital memory and to a synaptic connection circuit in an artificial neural network are first introduced. Then, current status of the experimental studies on MF(MI)S (I: insulator) capacitors and FETs is presented and finally prospects of FET-type ferroelectric memory are discussed.

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Cite This Study

Hiroshi Ishiwara (Mon,) studied this question.

synapsesocial.com/papers/6a1acc8d353de69e89b8b071 https://doi.org/https://doi.org/10.1109/drc.1999.806306

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