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Near-threshold circuits operating at ultra-low voltage (ULV) have matured with integration in commercial products, such as ultra-low-power (ULP) MCUs for the IoT 1. In this market, MCU design faces the key performance tradeoff between speed, active power, deep-sleep retention power and wakeup time, with the challenge of preserving it over PVT corners. We present a ULP MCU SoC in 28nm FDSOI codenamed SleepRunner, exploiting back-biasing (BB) capability of FDSOI to push the performance tradeoff beyond the state-of-the-art.
Bol et al. (Fri,) studied this question.