Preparation and characterization of molecule-based transistors with a 50-nanometer source-drain separation with use of shadow deposition techniques. Toward faster, more sensitive molecule-based devices

ADVERTISEMENT RETURN TO ISSUEPREVArticleNEXTPreparation and characterization of molecule-based transistors with a 50-nanometer source-drain separation with use of shadow deposition techniques. Toward faster, more sensitive molecule-based devicesE. Tracy Turner Jones, Oliver M. Chyan, and Mark S. WrightonCite this: J. Am. Chem. Soc. 1987, 109, 18, 5526–5528Publication Date (Print):September 1, 1987Publication History Published online1 May 2002Published inissue 1 September 1987https://doi.org/10.1021/ja00252a039RIGHTS & PERMISSIONSArticle Views291Altmetric-Citations92LEARN ABOUT THESE METRICSArticle Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to reflect usage leading up to the last few days.Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts.The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric.com with additional details about the score and the social media presence for the given article. Find more information on the Altmetric Attention Score and how the score is calculated. Share Add toView InAdd Full Text with ReferenceAdd Description ExportRISCitationCitation and abstractCitation and referencesMore Options Share onFacebookTwitterWechatLinked InReddit PDF (2 MB) Get e-Alerts Get e-Alerts