Key points are not available for this paper at this time.
Short-time heat treatments in a H2 flow, and under an As vapor, have been performed on n-type and p-type GaAs crystals. Acceptors are created at the surface and proceed to the interior. The changes in carrier concentration as function of As vapor pressure showed the acceptors to be associated with As vacancies.
Muñoz et al. (Wed,) studied this question.