Ultrathin (lt;10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications

We report, for the first time, the novel concept of ultrathin (∼10nm) W/NbO x /Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO 2 , such as high temperature stability (∼160°C), fast switching speed (∼22ns), good switching uniformity, and extreme scalability of device area (ϕ∼10nm)/thickness (∼10nm) were obtained. By oxidizing NbO 2 , we can form ultrathin Nb 2 O 5 /NbO 2 stack layer for hybrid memory devices with both TS and MS. Without additional selector device, 1Kb cross-point hybrid memory device without SET/RESET disturbance up to 10 6 cycles was demonstrated.