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NiO films display unipolar resistance switching characteristics, due to the electrically induced formation and rupture of nanofilaments. While the applicative interest for possible use in highly dense resistance switching memory (RRAM) is extremely high, switching phenomena pose strong fundamental challenges in understanding the physical mechanisms and models. This work addresses the set and reset mechanisms for the formation and rupture of nanofilaments in NiO RRAM devices. Reset is described in terms of thermally-accelerated diffusion and oxidation processes, and its resistance dependence is explained by size-dependent Joule heating and oxidation. The filament is described as a region with locally-enhanced doping, resulting in an insulator-metal transition driven by structural and chemical defects. The set mechanism is explained by a threshold switching effect, triggering chemical reduction and a consequent local increase of metallic doping. The possible use of the observed resistance-dependent reset and set parameters to improve the memory array operation and variability is finally discussed.
Ielmini et al. (Mon,) studied this question.