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A highly flexible and transparent transistor based on an exfoliated MoS2 channel and CVD-grown graphene electrodes is reported by W.-K. Hong, H. C. Ko, and co-workers on page 3295. Introducing 2D nanomaterials provides high mechanical flexibility (available bending radius: ± 2.2 mm), optical transmittance (74%), and high current on/off ratio (>104) with an average field effect mobility of ≈4.7 cm2 V−1 s−1, all of which cannot be achieved by other transistors consisting of a MoS2 active channel/metal electrodes or graphene channel/graphene electrodes. In particular, the MoS2/graphene interface has a low Schottky barrier of ≈22 meV, which is comparable to the MoS2/metal interface.
Yoon et al. (Fri,) studied this question.