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We present the results of low-temperature photoluminescence experiments performed on GaAs single quantum wells grown by metal organic chemical-vapor deposition. The luminescence line is down shifted by a few milli-electron-volts below the n=1 heavy-hole exciton absorption peak. This behavior is interpreted in terms of exciton trapping on interface defects. A simple model provides reasonable values for the exciton binding energy on these defects as well as insights on the lack of thermalization which characterizes the trapped exciton photoluminescence.
Bastard et al. (Fri,) studied this question.