February 1, 2008
View Full PaperDoping asymmetry in wide‐bandgap semiconductors: Origins and solutions
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Abstract
Abstract Wide‐bandgap (WBG) semiconductors are essential materials for making short‐wavelength and transparent optoelectronic devices. However, a serious obstacle to realizing WBG semiconductor‐based devices is their common doping asymmetry problem, i.e., a WBG semiconductor can be doped easily either p‐type or n‐type, but not both. This paper reviews the possible origins for doping asymmetry problems and updates our recent progress in searching for approaches to overcome the doping bottleneck in WBG semiconductors. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)