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An easily accessible plasma etching approach is utilized to acquire film-depth-dependent light absorption spectra and 3D charge transport pathways in a polymer field-effect transistor, both with nanometer depth resolution. As an application of this study, depth-dependent optical and electronic properties of semiconductor/insulator blends films are synergically manipulated to increase optical transparency toward higher than 90% with simultaneously improved transistor performance.
Bu et al. (2016) studied this question.