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Lasing in GaInAsP/InP SCH single-quantum-well lasers is reported for the first time and confirmed by the oscillation wavelength. Threshold current densities were 230 A/cm 2 and 11 kA/cm 2 for CW operation at 77 K and pulsed operation at room temperature, respectively. It was experimentally found important to make the band-gap energy difference between quantum-well and optical confinement layers larger than 0.23 eV in order to confine carriers in the quantum-well layers.
Miyamoto et al. (1987) studied this question.