Sub-Milliwatt Power III-N Light Emitting Diodes at 285 nm

Using low defect density n + -Al 0.4 Ga 0.6 N buffer layers we fabricated AlGaN p - n junction light emitting diodes over sapphire substrates with peak emission at 285 nm. Powers as high as 0.15 mW were measured at 400 mA pulse pumping.