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A novel VDMOS structure with low reverse recovery charge via process-compatible MOS-channel diode integration | Synapse
March 3, 2026
A novel VDMOS structure with low reverse recovery charge via process-compatible MOS-channel diode integration
YZ
Yong Zhang
Hunan Institute of Science and Technology
RT
Ran Tao
National Institute of Standards and Technology
DG
Dawei Gao
Puntos clave
A novel VDMOS structure shows reduced reverse recovery charge, enhancing efficiency.
The reverse recovery charge was successfully lowered by integrating MOS-channel diodes into the design.
This observational analysis focuses on process-compatible modifications to the existing VDMOS configurations.
Such innovations may enable more efficient power devices, but external validation is needed.
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Zhang et al. (Wed,) studied this question.
synapsesocial.com/papers/69a75c54c6e9836116a251f6
https://doi.org/https://doi.org/10.1016/j.microrel.2026.116036