A novel VDMOS structure with low reverse recovery charge via process-compatible MOS-channel diode integration

Key Points

• A novel VDMOS structure shows reduced reverse recovery charge, enhancing efficiency.
• The reverse recovery charge was successfully lowered by integrating MOS-channel diodes into the design.
• This observational analysis focuses on process-compatible modifications to the existing VDMOS configurations.
• Such innovations may enable more efficient power devices, but external validation is needed.