Hardened design and practical effect of 60 V trench MOSFET resistant to irradiation

Puntos clave

• Enhanced irradiation resistance improves electrical performance and longevity of trench MOSFETs.
• Thermal stability measurements showed performance consistency under simulated irradiative conditions.
• Design modifications in the semiconductor structure were implemented to address specific vulnerabilities.
• Findings suggest improved reliability could have significant implications for various technological applications.