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January 29, 2026Nuclear Science and Techniques

Hardened design and practical effect of 60 V trench MOSFET resistant to irradiation

Dexin Chen Ying Wang Huolin Huang Yan-Xing Song Meng-Tian Bao Fei Cao

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Key Points

Enhanced irradiation resistance improves electrical performance and longevity of trench MOSFETs.
Thermal stability measurements showed performance consistency under simulated irradiative conditions.
Design modifications in the semiconductor structure were implemented to address specific vulnerabilities.
Findings suggest improved reliability could have significant implications for various technological applications.

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Implication

Observational analysis reveals improved irradiation resistance in trench MOSFETs, highlighting enhanced reliability for semiconductor applications.

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Cite This Study

Chen et al. (2026) studied this question.

synapsesocial.com/papers/69a75dcfc6e9836116a280f4 https://doi.org/10.1007/s41365-026-01887-5

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