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Hardened design and practical effect of 60 V trench MOSFET resistant to irradiation | Synapse
March 3, 2026
Hardened design and practical effect of 60 V trench MOSFET resistant to irradiation
DC
Dexin Chen
Guangxi University
YW
Ying Wang
HH
Huolin Huang
Dalian University of Technology
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Key Points
Enhanced irradiation resistance improves electrical performance and longevity of trench MOSFETs.
Thermal stability measurements showed performance consistency under simulated irradiative conditions.
Design modifications in the semiconductor structure were implemented to address specific vulnerabilities.
Findings suggest improved reliability could have significant implications for various technological applications.
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Chen et al. (Thu,) studied this question.
synapsesocial.com/papers/69a75dcfc6e9836116a280f4
https://doi.org/https://doi.org/10.1007/s41365-026-01887-5