Performance improvement of NiO/β-Ga2O3 heterojunction diodes using ultrathin amorphous BN interfacial layer

Puntos clave

• The central aim is to investigate the performance enhancement of NiO/β-Ga2O3 diodes using an amorphous BN layer.
• Developed NiO/β-Ga2O3 heterojunction diodes with an ultrathin a-BN interfacial layer.
• Compared performance metrics of diodes with and without the a-BN layer.
• Analyzed turn-on voltage, forward current, and interface states.
• The NiO/a-BN/β-Ga2O3 diodes showed a lower turn-on voltage.
• Higher forward current was observed in diodes with the a-BN layer.
• Reduced power dissipation was achieved.
• The a-BN interfacial layer decreased interface states, enhancing operational reliability.

Resumen