This work demonstrates enhanced performance in diodes with a boron nitride layer, suggesting better reliability.
In this work, a NiO/β-Ga2O3 heterojunction diode with an ultrathin (∼2 nm) amorphous boron nitride (a-BN) interfacial layer (IL) is presented. The NiO/a-BN/β-Ga2O3 heterojunction diode exhibited a lower turn-on voltage and a higher forward current, thereby reducing the power dissipation, compared to the NiO/β-Ga2O3 diode without an a-BN IL. It is also found that the a-BN IL reduces the interface states, leading to the improvement of the operational reliability after bias stress and reverse blocking characteristics.
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Kim et al. (2026) studied this question.
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