Investigation of high-energy proton irradiation effects on carbon nanotube field-effect transistors

Puntos clave

• This research examines how high-energy proton irradiation affects the performance of carbon nanotube field-effect transistors (CNTFETs).
• Systematically investigated the effects of 200 MeV proton irradiation on CNTFETs
• Analyzed key device parameters including threshold voltage and transconductance
• Irradiation significantly affected the threshold voltage with observed shifts
• Transconductance decreased with higher irradiation doses, impacting device performance