Investigation of high-energy proton irradiation effects on carbon nanotube field-effect transistors

Jifang Li; Hongxia Guo; Wuying Ma; Xiangli Zhong; Ruxue Bai; Songwen Wang; Fengqi Zhang

doi:10.1039/d6tc00877a

January 1, 2026Journal of Materials Chemistry C

Investigation of high-energy proton irradiation effects on carbon nanotube field-effect transistors

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Key Points

This research examines how high-energy proton irradiation affects the performance of carbon nanotube field-effect transistors (CNTFETs).
Systematically investigated the effects of 200 MeV proton irradiation on CNTFETs
Analyzed key device parameters including threshold voltage and transconductance
Irradiation significantly affected the threshold voltage with observed shifts
Transconductance decreased with higher irradiation doses, impacting device performance

Implication

Investigates proton irradiation effects on CNTFETs, indicating vital performance insights.

Abstract

This study systematically investigates the effects of 200 MeV proton irradiation on the electrical properties of carbon nanotube field-effect transistors (CNTFETs). Key device parameters, including the threshold voltage (Vth), transconductance...

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Cite This Study

Li et al. (2026) studied this question.

synapsesocial.com/papers/6a080a5aa487c87a6a40c466 https://doi.org/10.1039/d6tc00877a

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Investigation of high-energy proton irradiation effects on carbon nanotube field-effect transistors

Key Points

Implication

Abstract

Discussion

Cite This Study

Investigation of high-energy proton irradiation effects on carbon nanotube field-effect transistors

Key Points

Implication

Abstract

Discussion

Cite This Study

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