Resonant tunneling oscillations in a GaAs-AlxGa1−xAs heterostructure at room temperature

This letter reports the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs-AlxGa1−xAs -GaAs-AlxGa1−x As-GaAs structure at room temperature. The NDR yields radio frequency oscillations at 300 K in a coaxial cable circuit that compare closely to those of a standard 1N3716 tunnel diode.