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This letter reports the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs-AlxGa1−xAs -GaAs-AlxGa1−x As-GaAs structure at room temperature. The NDR yields radio frequency oscillations at 300 K in a coaxial cable circuit that compare closely to those of a standard 1N3716 tunnel diode.
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Shewchuk et al. (1985) studied this question.
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