An electrically modifiable synapse array composed of metal-ferroelectric-semiconductor (MFS) FET's using SrBi/sub 2/Ta/sub 2/O/sub 9/ thin films

An array of metal-ferroelectric-semiconductor field effect transistors (MFSFETs) is fabricated on a silicon-on-insulator (SOI) structure using SrBi/sub 2/Ta/sub 2/O/sub 9/ as the gate insulator. It is demonstrated that each FET shows good characteristics as a nonvolatile analog memory due to partial polarization of the SrBi/sub 2/Ta/sub 2/O/sub 9/ film and that the array operates as an electrically modifiable synapse circuit for carrying out the weighted sum operation in an artificial neural network.